Features

Floatingchanneldesignedforbootstrapoperation

Fullyoperationalto+200V

Toleranttonegativetransientvoltage,dV/dt

immune

Gatedrivesupplyrangefrom10Vto20V

Undervoltagelockout

3.3V,5V,and15Vlogiccompatible

Cross-conductionpreventionlogic

Matchedpropagationdelayforbothchannels

Internalsetdeadtime

High-sideoutputinphasewithHINinput

Low-sideoutputoutofphasewith
input

RoHScompliant

Description

TheIRS2003isahighvoltage,highspeedpower

MOSFETandIGBTdriverswithdependenthigh-and

low-sidereferencedoutputchannels.ProprietaryHVIC

andlatchimmuneCMOStechnologiesenableruggedized

monolithicconstruction.Thelogicinputis

compatiblewithstandardCMOSorLSTTLoutput,down

to3.3Vlogic.Theoutputdriversfeatureahighpulsecurrentbufferstagedesignedforminimumdrivercrossconduction.

ThefloatingchannelcanbeusedtodriveanN-channelpowerMOSFETorIGBTinthehigh-side

configurationwhichoperatesupto200V.