Description

TheIRF6716MPbFcombinesthelatestHEXFET®PowerMOSFETS

ilicontechnologywiththeadvancedDirectFETTMpackagingtoachieve

theloweston-stateresistanceinapackagethathasthefoo

tprintofaSO-8andonly0.6mmprofile.TheDirectFETpackageiscompatible

withexistinglayoutgeometriesusedinpowerapplication

s,PCBassemblyequipmentandvaporphase,infra-redorconvectionsoldering

techniques,whenapplicationnoteAN-1035isfollowedreg

ardingthemanufacturingmethodsandprocesses.TheDirectFETpackageallows

dualsidedcoolingtomaximizethermaltransferinpowersy

stems,improvingpreviousbestthermalresistanceby80%.

TheIRF6716MPbFbalancesbothlowresistanceandlowcharge

alongwithultralowpackageinductancetoreducebothconductionand

switchinglosses.Thereducedtotallossesmakethisproduct

idealforhighefficiencyDC-DCconvertersthatpowerthelatestgenerationof

processorsoperatingathigherfrequencies.TheIRF6716MPb

Fhasbeenoptimizedforparametersthatarecriticalinsynchronousbuck